Kioxia and SanDisk announced the joint release of a new generation of QLC 3D flash memory technology. Featuring a 332-layer architecture and optimized layout design, the new technology increases bit density by up to 60% compared to the 8th generation product, exceeding 37 Gb/mm², setting a new industry benchmark in bit density, performance, and energy efficiency.
The new generation of QLC 3D flash memory technology adopts CBA (CMOS directly Bonded to Array) technology, where CMOS logic circuits and memory arrays are fabricated on separate wafers and then bonded through high-precision wafer alignment processes, providing enhanced bit density and fast NAND I/O interface speeds. Kioxia and SanDisk have also adopted the Toggle DDR6.0 interface standard and SCA protocol, making it the industry's first QLC 3D flash memory technology with a NAND I/O interface rate reaching 4.8Gbps.
Additionally, PI-LTT technology has been introduced to reduce power consumption and improve I/O data output transmission efficiency. With the widespread adoption of artificial intelligence (AI) technology, the volume of data generated is expected to increase significantly, leading to a growing demand for improved energy efficiency in modern data centers.
The company has confirmed that this new technology is also based on the 10th generation BiCS FLASH memory technology. Samples of TLC flash memory using the same technology began shipping last month, with a total layer count of 332 layers, but a bit density of 29 Gb/mm². Clearly, QLC flash memory has a greater advantage in terms of storage density.
Currently, Kioxia is pursuing two distinct product lines: the 9th generation BiCS FLASH memory solution offers high performance at a relatively low investment cost; the 10th generation BiCS FLASH memory solution utilizes advanced stacking technology to achieve ultra-large capacity and excellent performance.